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Zinc Oxide Thin-Film Transistors with Location-Controlled Crystal Grains Fabricated by Low-Temperature Hydrothermal Method
| Content Provider | Semantic Scholar |
|---|---|
| Author | Cheng, Huang-Chung Yang, Po-Yu Wang, Jyh-Liang Agarwal, Sanjay Tsai, Wei-Chih Wang, Shui-Jinn Lee, Illhwan |
| Copyright Year | 2011 |
| Abstract | High-performance zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) with a single vertical grain boundary in the channel have been successfully fabricated by a novel low-temperature (i.e., 85°C) hydrothermal method. The ZnO active channel was laterally grown with an aluminum-doped ZnO seed layer underneath the Ti/Pt film. Consequently, such BG-TFTs (W/L = 250 μm/10 μm) demonstrated the high field-effect mobility of 9.07 cm2/V - s, low threshold voltage of 2.25 V, high on/off-current ratio above 106, superior current drivability, indistinct hysteresis phenomenon, and small standard deviations among devices, attributed to the high-quality ZnO channel with the single grain boundary. |
| Starting Page | 497 |
| Ending Page | 499 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/LED.2010.2103921 |
| Volume Number | 32 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/9074/1/000288664800023.pdf |
| Alternate Webpage(s) | https://doi.org/10.1109/LED.2010.2103921 |
| Journal | IEEE Electron Device Letters |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
