Schottky barrier engineering on dopant-segregated schottky silicon nanowire MOSFETs

Content Provider	Semantic Scholar
Author	Chin, Yoke King
Copyright Year	2010
Abstract	Silicon nanowire with Gate-All-Around architecture is considered as one of the most promising candidates for CMOS scaling beyond 11 nm technology node due to its superior gate to channel electrostatic control. However, due to the one dimensional nature of nanowire, the resistance at the nanowire source/drain (S/D) extension is inherently high. Nickel silicide (NiSi) Schottky S/D is introduced to address this issue. 2 potential challenges associated with NiSi Schottky S/D are: (1) rapid NiSi intrusion into the silicon nanowire channel during silicidation and (2) the existence of a Schottky barrier which leads to increased contact resistance. In this work, to address issue (1), a two-step rapid thermal annealing (RTA) silicidation was introduced to control the NiSi intrusion into nanowire. TEM imaging was used to characterize intrusion lengths into silicon nanowires. A low temperature first RTA was found to be desirable to control the intrusion length while the Ni thickness was a less critical factor if the proposed first RTA was employed. Consistency in electrical characterization of the devices suggests that the intrusion length using the two-step RTA is indeed repeatable. To address issue (2), dopant segregated Schottky (DSS) contact was employed. By using silicidation induced dopant segregation (SIDS), boron or phosphorus was implanted into the S/D before silicidation took place to segregate the dopants at the NiSi/Si interface through a phenomenon known as 'snow plow'. The fabricated DSS nanowire MOSFETs demonstrated good electrical characteristics with high drive currents School ofElectrical and Electronics Engineering iii ATTENTION: The Singapore Copyright Act applies to the use of this document. Nanyang Technological University Library
File Format	PDF HTM / HTML
DOI	10.32657/10356/53206
Alternate Webpage(s)	https://repository.ntu.edu.sg/bitstream/handle/10356/53206/ChinYokeKing10.pdf?isAllowed=y&sequence=1
Alternate Webpage(s)	https://doi.org/10.32657/10356%2F53206
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article