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Interface Recombination in Depleted Heterojunction Photovoltaics based on Colloidal Quantum Dots
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kemp, Kyle W. Labelle, A. J. Thon, Susanna M. Ip, Alexander H. Kramer, Illan J. Hoogland, Sjoerd Sargent, Edward. H. |
| Copyright Year | 2013 |
| Abstract | Interface recombination was studied in colloidal quantum dot photovoltaics. Optimization of the TiO2-PbS interface culminated in the introduction of a thin ZnO buffer layer deposited with atomic layer deposition. Transient photovoltage measurements indicated a nearly two-fold decrease in the recombination rate around 1 sun operating conditions. Improvement to the recombination rate led to a device architecture with superior open circuit voltage (VOC) and photocurrent extraction. Overall a 10% improvement in device efficiency was achieved with Voc enhancements up to 50 mV being realized. |
| Starting Page | 917 |
| Ending Page | 922 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1002/aenm.201201083 |
| Volume Number | 3 |
| Alternate Webpage(s) | https://www.light.utoronto.ca/edit/files/publications/2013/interface_recombination_in_depleted_heterojunction_photovoltaics_based_on_colloidal_quantum_dots.pdf |
| Alternate Webpage(s) | https://doi.org/10.1002/aenm.201201083 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |