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Efficient quantum dot light-emitting diodes with solution-processable molybdenum oxide as the anode buffer layer.
| Content Provider | Semantic Scholar |
|---|---|
| Author | He, Shaojian Li, Shusheng Wang, Fuzhi Wang, Andrew Y. Tan, Zhan’ao |
| Copyright Year | 2013 |
| Abstract | Quantum dot light-emitting diodes (QD-LEDs) are characterized by pure and saturated emission colors with narrow bandwidth. Optimization of the device interface is an effective way to achieve stable and high-performance QD-LEDs. Here we utilized solution-processed molybdenum oxide (MoOx) as the anode buffer layer on ITO to build efficient QD-LEDs. Using MoOx as the anode buffer layer provides the QD-LED with good Ohmic contact and a small charge transfer resistance. The device luminance is nearly independent of the thickness of the MoOx anode buffer layer. The QD-LEDs with a MoOx anode buffer layer exhibit a maximum luminance and luminous efficiency of 5230 cd m(-2) and 0.67 cd A(-1) for the yellow emission at 580 nm, and 7842 cd m(-2) and 1.49 cd A(-1) for the red emission at 610 nm, respectively. |
| Starting Page | 175201 |
| Ending Page | 175201 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1088/0957-4484/24/17/175201 |
| PubMed reference number | 23558319 |
| Journal | Medline |
| Volume Number | 24 |
| Issue Number | 17 |
| Alternate Webpage(s) | http://www.escience.cn/system/download/60878 |
| Alternate Webpage(s) | https://doi.org/10.1088/0957-4484%2F24%2F17%2F175201 |
| Journal | Nanotechnology |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
