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Velocity saturation in few-layer MoS2 transistor
| Content Provider | Semantic Scholar |
|---|---|
| Author | Fiori, Gianluca Szafranek, B. N. Iannaccone, Giuseppe Neumaier, Daniel |
| Copyright Year | 2013 |
| Abstract | In this work, we perform an experimental investigation of the saturation velocity in MoS2 transistors. We use a simple analytical formula to reproduce experimental results and to extract the saturation velocity and the critical electric field. Scattering with optical phonons or with remote phonons may represent the main transport-limiting mechanism, leading to saturation velocity comparable to silicon, but much smaller than that obtained in suspended graphene and some III–V semiconductors. |
| Starting Page | 233509 |
| Ending Page | 233509 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.4840175 |
| Volume Number | 103 |
| Alternate Webpage(s) | http://www.gianlucafiori.org/articles/fiori_MoS2.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.4840175 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
