Time-Resolved Imaging of Electrochemical Switching in Nanoscale Resistive Memory Elements

Content Provider	Semantic Scholar
Author	Hubbard, William A. White, Edward L. Kerelsky, Alexander Jasmin, Gaëtan Lodico, Jared J. Matthew, Mwanja Tenywa Mecklenburg Regan, Brian C.
Copyright Year	2015
Abstract	FLASH memory is reaching its scaling limit, but resistive random access memory (ReRAM) is considered a promising successor [1]. In ReRAM, metal electrodes sandwiching an insulating electrolyte form a digital memory element, where the presence or absence of a conducting path through the insulator represents one bit of information. The conducting filament is thought to form, atom-by-atom, when subject to a SET voltage applied across the electrodes, and to disintegrate when subject to a RESET voltage. We use scanning transmission electron microscopy (STEM) to image nanoscale ReRAM devices switching in situ. Operating the devices with small current limits slows the rate of filament formation and reduces confounding thermal effects, allowing us to obtain time-resolved images of filament formation and regeneration.
File Format	PDF HTM / HTML
Alternate Webpage(s)	http://diyhpl.us/~nmz787/M&M%202015/7337/1911.pdf
Language	English
Access Restriction	Open
Subject Keyword	Atom Behavior Cytoskeletal Filaments Flash memory Image scaling Memory Disorders Natural regeneration Random access Reaching Resistive random-access memory Scaling limit Scanning Transmission Electron Microscopy Procedures Semiconductor memory Test scaling Topological insulator electrode voltage
Content Type	Text
Resource Type	Article