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Flexible Dual-layer Channel Gallium-doped ZnO Thin-film Transistors Fabricated on Plastic Substrates at Room Temperature
| Content Provider | Semantic Scholar |
|---|---|
| Author | Huang, Fupei Han, Dedong Shan, Dongfang Zhang, Shengdong Tian, Yu Cong, Yuqi Cai, Jian Wang, Li Zhang, Xing Wang, Yongmei |
| Copyright Year | 2013 |
| Abstract | Optically transparent bottom-gate type thin-film transistors (TFTs) with dual-layer Gallium-doped ZnO (GZO) films serve as channel layer are fabricated on flexible plastic substrate at room temperature. We use SiO2 as gate insulator and indium tin oxide (ITO) as gate, source and drain electrodes. Compared with single-layer channel TFT, dual-layer channel TFT has better electrical properties of on/off current ratio and field effect mobility. TFT with high-density-carrier GZO layer deposited at O2/Ar+O2 gas flow ratio of 15% has the best characteristics. It has drain current on/ off ratio of about 10 6 and field effect mobility of 139 cm 2 V -1 s -1 . We tested the electrical properties before and after repetitive bending, and the results prove that the device has quite good mechanical flexibility. |
| File Format | PDF HTM / HTML |
| DOI | 10.7567/SSDM.2013.PS-9-16 |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm2013/PS-9-16/public/pdf_archive?type=in |
| Alternate Webpage(s) | https://doi.org/10.7567/SSDM.2013.PS-9-16 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
