NDLI: Structural Modifications in Free-Standing InGaN/GaN LEDs after Femtosecond Laser Lift-Off

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Structural Modifications in Free-Standing InGaN/GaN LEDs after Femtosecond Laser Lift-Off

Content Provider	Semantic Scholar
Author	Bornemann, Steffen Yulianto, Nursidik Meyer, Tobias Gülink, Jan Margenfeld, Christoph Seibt, Michael Wasisto, Hutomo Suryo Waag, A.
Copyright Year	2018
Abstract	A laser lift-off (LLO) process has been developed for detaching thin InGaN/GaN lightemitting diodes (LED) from their original sapphire substrates by applying an ultrafast laser. LLO is usually based on intense UV irradiation, which is transmitted through the sapphire substrate and subsequently absorbed at the interface to the epitaxially grown GaN stack. Here, we present a successful implementation of a two-step LLO process with 350 fs short pulses in the green spectral range (520 nm) based on a two-photon absorption mechanism. Cathodo- and electroluminescence experiments have proven the functionality of the LLO-based chips. The impact of radiation on the material quality was analysed with scanning (SEM) and transmission electron microscopy (TEM), revealing structural modifications inside the GaN layer in some cases.
Starting Page	897
Ending Page	897
Page Count	1
File Format	PDF HTM / HTML
DOI	10.3390/proceedings2130897
Volume Number	2
Alternate Webpage(s)	https://res.mdpi.com/proceedings/proceedings-02-00897/article_deploy/proceedings-02-00897.pdf?attachment=1&filename=
Alternate Webpage(s)	https://doi.org/10.3390/proceedings2130897
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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