CHEMICAL MECHANICAL POLISHING SLURRY USEFUL FOR COPPER SUBSTRATES BACKGROUND OF THE INVENTION 1. Field of the Invention

Content Provider	Semantic Scholar
Author	Utech, Benjamin
Copyright Year	2017
Abstract	73 Assignee: Cabot Corporation, Boston, Mass. Carpio et al., Journal. TSF (Thin Solid Films), Article: 6649, Initial Study on Copper CMP Slurry Chemistries (1995). 21 Appl. No.: 08/763,705 Hirabayashi et al., February 22–23, 1996 CMP-MIC Con ference-96ISMIC-100P, pp. 119-123, Chemical Mechani 22 Filed: Dec. 9, 1996 cal Polishing of Copper Using a Slurry Composed of Gly 51) Int. Cl. .......................... C09K 13.00. COOK 13/04, cine and Hydrogen Peroxide (1996). C09K 13/06 Luo et al., February 22–23, 1996 CMP-MIC Conference 52 U.S. Cl. ........................ 252.79.1.252/792. 252/79.4 96ISMIC-100P, pp. 145-151, Chemical-Mechanical Pol 58 Field of Search .................................. 25279,792, ishing of Copper In Acid Media (1996). 252/79.4 Steigerwald et al., J. Electrochem. Soc., vol. 142, No. 7, pp. 2379-2385, Electrochemical Potential Measurements. Dur 56) References Cited ing the Chemical-Mechanical Polishing of Cooper Thin Films (1995). U.S. PATENT DOCUMENTS “Chemical Processes. In The Chemical Mechinal Polishing 4,086,176 4/1978 Ericson et al. .......................... 252/100 of Copper'; Steigerwald et al.; Materials Chemistry and 4,671,851 6/1987 Beyer et al. ..... ... 156/645 Physics, vol. 41, No. 3, pp. 217-228, Aug. 1995. 4,789,648 12/1988 Chow et al. .. ... 437/225 4,910,155 3/1990 Cote et al. ... ... 437/8 Primary Examiner Benjamin Utech s o p al E. ASSistant Examiner-George Goudreau 2 -2 OC. C. a. -
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