NDLI: A Bistable Electrostatic Silicon Nanofin Relay for Nonvolatile Memory Application

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A Bistable Electrostatic Silicon Nanofin Relay for Nonvolatile Memory Application

Content Provider	Semantic Scholar
Author	Soon, Bowoon Ng, Eldwin J. Singh, Navab Tsai, Julius Minglin Qian, You Le, Chengkuo
Copyright Year	2013
Abstract	We present a nanoelectromechanical (NEM) relay that is capable of demonstrating two stable states without on-hold power due to the influence of van der Waals force. This is realized by leveraging a silicon nanofin (SiNF) as a relay that can switch between two lateral terminals. The smallest dimension of the SiNF is 80-nm width by 2- μm length. The SiNF is able to maintain its geometrical position even after the bias voltage is turned off. Bistable hysteresis behavior with pull-in voltage (VPI) and reset voltage (VRESET) as low as 8.4 and 10.1 V is measured. The nanoscale footprint of this device shows great potential for high-density nonvolatile memory applications.
Starting Page	1004
Ending Page	1006
Page Count	3
File Format	PDF HTM / HTML
DOI	10.1109/JMEMS.2013.2266859
Volume Number	22
Alternate Webpage(s)	http://oar.a-star.edu.sg/jspui/bitstream/123456789/601/1/PUB13-080%20MEMS-011.pdf
Alternate Webpage(s)	https://www.ece.nus.edu.sg/stfpage/elelc/Publication/2013/JMEMS_13V22_5_A%20Bistable%20Electrostatic%20Silicon%20Nanofin%20Relay%20for%20Nonvolatile%20Memory%20Application.pdf
Journal	Journal of Microelectromechanical Systems
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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