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Gain limiting processes in Er-doped Si nanocrystal waveguides in SiO2
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kik, Pieter G. Polman, Albert |
| Copyright Year | 2002 |
| Abstract | Erbium-doped Si nanocrystal based optical waveguides were formed by Er and Si ion implantation into SiO2. Optical images of the waveguide output facet show a single, well-confined optical mode. Transmission measurements reveal a clear Er related absorption of 2.7 dB/cm at 1.532 μm, corresponding to a cross section of 8×10−20 cm2. The Si nanocrystals act as sensitizers for Er but under high doping conditions (∼50 Er ions per nanocrystals) no pump-induced change in the Er related absorption is observed under optical pumping (λ=458 nm), which is ascribed to an Auger quenching effect. For very high pump powers, a broad absorption feature is observed, attributed to free carrier absorption. |
| Starting Page | 534 |
| Ending Page | 536 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.1418417 |
| Alternate Webpage(s) | http://kik.creol.ucf.edu/publications/2002-kik-jap.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.1418417 |
| Volume Number | 91 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
