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Cleave Initiation Using Varying on Implant Dose Cross Reference to Related Applications
| Content Provider | Semantic Scholar |
|---|---|
| Author | Nene Serie N. |
| Copyright Year | 2017 |
| Abstract | An approach for providing a cleave initiation using a varying ion implant dose is described. In one embodiment, there is a method of forming a substrate. In this embodiment, a semi conductor material is provided and implanted with a spatially varying dose of one or more ion species. A handler Substrate is attached to the implanted semiconductor material. A cleave of the implanted semiconductor material is initiated from the handler substrate at a preferential location that is a function of a dose gradient that develops from the spatially varying dose of one or more ion species implanted into the semiconductor material |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/b6/0c/5d/34034aa0ecf34c/US20090209084A1.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
