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Unambiguous Extraction of Threshold Voltage Based on the Transconductance-to-Current Ratio
| Content Provider | Semantic Scholar |
|---|---|
| Author | Cunha, Ana Isabela Araújo Schneider, Márcio C. Galup-Montoro, Carlos Caetano, C. D. C. Machado, Marcio Bender Politécnica, Escola |
| Copyright Year | 2005 |
| Abstract | This paper presents a very simple methodology for determining the threshold voltage. The procedure is based on the expressions of the Advanced Compact MOSFET (ACM) model, valid in all regimes of operation, which assures physical meaning, consistency and reliability for the results. The extraction of the threshold voltage is accomplished over a single measured drain current characteristic in the linear region, in order to avoid short channel effects. Experimental results for the extraction of threshold voltages in 0.35 and 0.18µm CMOS tecnhologies are shown. |
| Starting Page | 139 |
| Ending Page | 142 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.nsti.org/publications/Nanotech/2005/pdf/436.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
