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Dark Current Characteristics of a Radiation Detector Array Developed Using MOVPE-Grown Thick CdTe Layers on Si Substrate
| Content Provider | Semantic Scholar |
|---|---|
| Author | Yasuda, Kazuhito Niraula, Madan Fujimura, Naoyuki Tachi, T. Inuzuka, Hiroyuki Namba, Shinichi Muramatsu, Shinichi Kondo, Takaya Agata, Y. |
| Copyright Year | 2012 |
| Abstract | We present reverse bias current (dark current) characteristics of a two-dimensional monolithic pixel-type nuclear radiation detector array fabricated using metalorganic vapor-phase epitaxy (MOVPE)-grown thick CdTe epitaxial layers on Si substrate. The (14 × 8) pixel array was formed by cutting deep vertical trenches using a dicing saw, where each pixel possesses a p-CdTe/ n-CdTe/n+-Si heterojunction diode structure. The dark currents showed pixel-to-pixel variations when measured at higher applied biases exceeding 100 V. The dark current had a dependence on the pixel thickness, where pixels with lower CdTe thickness exhibited higher currents. Moreover, the temperature dependence of the dark current revealed that a deep level with activation energy of around 0.6 eV is responsible for the observed dark currents and their pixel-to-pixel variation. We discuss that the effective ratio of Te to Cd at the growth surface is a major factor that controls the thickness variation, and is also responsible for the formation of 0.6 eV deep levels. |
| Starting Page | 2754 |
| Ending Page | 2758 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/s11664-012-2121-7 |
| Volume Number | 41 |
| Alternate Webpage(s) | https://page-one.springer.com/pdf/preview/10.1007/s11664-012-2121-7 |
| Alternate Webpage(s) | https://doi.org/10.1007/s11664-012-2121-7 |
| Journal | Journal of Electronic Materials |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
