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CORRUGATION OF RIPPLED GRAPHENE EPITAXIALLY GROWN ON Ru ( 0001 ) 1
| Content Provider | Semantic Scholar |
|---|---|
| Author | Borca, Bogdana Barja, Sara Hermanns, Felix Garnica, Manuela Hinarejos, Juan José Parga, Amadeo L. Vázquez De Miranda, Rodolfo |
| Copyright Year | 2009 |
| Abstract | Theoretical predictions [1] and recent experiments [2-4] present graphene, one atom thick carbon layer, as a very interesting material for its extraordinary electronic properties and its application potential [1-7]. Although it has a zero band gap and a vanishing density of states at the Fermi energy, graphene exhibits metallic behaviour due to the topological singularities at the K points in the Brillouin zone. The conduction and the valence bands touch in conical, Dirac, point and the dispersion relation is linear within ±1 eV of the Fermi energy. In a freestanding graphene layer the Fermi energy coincides with the conical points [7-9]. For epitaxial graphene grown on SiC, the substrate-graphene stacking breaks the symmetry within the graphene unit cell opening a gap in the π-band at the Dirac point [10-12], there is also a small doping of the graphene layer. When graphene is grown on metallic surfaces [13], the metal substrates cause the Fermi level to move away from the conical points in graphene, resulting in doping with either electrons or holes [14]. The sign and amount of doping is due to the difference of work function between the metal and the carbon layer and from the chemical bonding between the metal and carbon atoms. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.nanospainconf.org/2009/Orals/Nanospain2009_Borca.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
