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Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal–oxide–semiconductor structures
| Content Provider | Semantic Scholar |
|---|---|
| Author | Khosru, Quazi D. M. Nakajima, Anri Yoshimoto, Takashi Yokoyama, Shin |
| Copyright Year | 2002 |
| Abstract | A simple and effective method for the extraction of interface trap distribution in ultrathin metal–oxide–semiconductor (MOS) structures is presented. By a critical analysis of bipolar-pulse-induced currents through MOS capacitors, a technique is developed to determine the energy distribution of the interface traps without requiring the knowledge of surface potential and doping profile in the semiconductor. The proposed technique can be efficiently used to probe electrical stress, hot-carrier, and radiation-induced interfacial degradations in ultrathin MOS structures. |
| Starting Page | 3952 |
| Ending Page | 3954 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.1481194 |
| Volume Number | 80 |
| Alternate Webpage(s) | https://ir.lib.hiroshima-u.ac.jp/files/public/1/18589/20141016132511941119/ApplPhysLett_80_3952.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.1481194 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
