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Effect of hydrogen on the electronic properties of In x Ga 1 À x As 1 À y N y Õ GaAs quantum wells
| Content Provider | Semantic Scholar |
|---|---|
| Author | Polimeni, Antonio Baldassarri, Guido Bissiri, H. M. Capizzi, Mario Reinhardt, Matthias Forchel, Alfred |
| Copyright Year | 2001 |
| Abstract | Atomic hydrogen irradiation leads to striking effects on the electronic properties of InxGa12xAs12yNy /GaAs single quantum wells as measured by photoluminescence spectroscopy. The InxGa12xAs12yNy band-gap energy blueshifts with increasing hydrogen dose and finally saturates at the value of a corresponding reference sample without nitrogen. The luminescence intensity decreases upon hydrogen irradiation with a strong dependence on nitrogen content. The above results have been found in a large set of samples differing for nitrogen and indium content, and are related to the formation of bonds between hydrogen and one or more nitrogen atoms. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://chimera.roma1.infn.it/G29/polimeni/PolimeniArticoli/Ref63.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |