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Ohmic Contacts for Gallium Arsenide Devices.
| Content Provider | Semantic Scholar |
|---|---|
| Author | Klohn, Kenneth L. Wandinger, Lothar |
| Copyright Year | 1968 |
| Abstract | Abstract : A study was made of various metals and metal alloys (Ag, Ni, In, and Au-Zn) which would make ohmic contacts to p- or n-type GaAs to determine the value of contact resistivity as a function of substrate impurity concentration. Contact resistivity values for p-type material varied from 1.2 x 10 to the -4th power ohm-cm sq for 2.8 x 10 to the 17th power/cc to 7.3 x 10 to the -7th ohm-cm sq for 9 x 10 to the 19th power/cc , and for n-type material from 2.5 x 10 to the -4th power ohm-cm sq for 1 x 10 to the 17th power/cc to 1.5 x 10 to the -5th power ohm-cm sq for 3 x 10 to the 18th power/cc. The metals were applied by evaporation or plating and followed by microalloying. The improvement in contact resistivity, as substrate impurity concentration increases, indicates the desirability of incorporating a thin, heavily doped region at the surface of a device by means of diffusion or epitaxy. The improvement in power output for a typical laser diode and its modified versions resulting from the reduction in R sub s is compared. (Author) |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://materion.com/-/media/files/advanced-materials-group/me/technicalpapers/ohmic-contacts_all.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
