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Application of Atom Probe on Fully Depleted Silicon-On-Insulator (FDSOI) Structures
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kambham, Ajay Kumar Flatoff, Dan Fu, Bianzhu |
| Copyright Year | 2016 |
| Abstract | The transistor device structures are rapidly scaling down to the nanometer regime, with the ongoing development in semiconductor device technology to reduce power consumption and to increase performance, able to do more useful important and valuable things as faster as possible. Present days the device structure has shrunk to a size below to few nanometers, which increases the challenges for every new generation of technology. To deliver higher performance while keeping limitations in control bulk silicon transistors are become more complex by adding additional manufacturing steps will become more expensive. The new innovations in process technology called Fully Depleted Silicon On Insulator (FDSOI) [1] is a planar process technology that delivers the benefits of the reduced silicon dimensions while simplifying the manufacturing process. This technology unfolds many different analogue and radio-frequency (RF) applications due to its unique capability [2]. FDSOI relies on a thin layer of silicon over a Buried Oxide layer. Transistors built into this top silicon layer are Ultra-Thin body devices and have unique, extremely attractive characteristics. |
| Starting Page | 696 |
| Ending Page | 697 |
| Page Count | 2 |
| File Format | PDF HTM / HTML |
| DOI | 10.1017/S1431927616004335 |
| Alternate Webpage(s) | http://journals.cambridge.org/fulltext_content/supplementary/MAM22_S3_minisite/7337/0696.pdf |
| Alternate Webpage(s) | https://doi.org/10.1017/S1431927616004335 |
| Volume Number | 22 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
