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Parabolic behavior of solution processed ZnSnO device performances depending on Zn/Sn ratios
| Content Provider | Semantic Scholar |
|---|---|
| Author | Jeon, Hye-Ji Chung, Kwun-Bum Park, Jin-Seong |
| Copyright Year | 2014 |
| Abstract | Thin film transistors (TFTs) with amorphous zinc tin oxide (ZTO) channel layer were fabricated by a simple and low-cost solution process, prepared by dissolving 0.2 M of zinc acetate dihydrate and tin chloride dihydrate in 20 mL of 2-methoxyethanol. All ZTO thin films showed amorphous phases and no impurities (no carbon and chlorine content) even at process temperature of 350 °C. As the Sn ratio in ZTO films increased, the values of saturated mobility (usat) and subthreshold gate swing (SS) exhibited a parabolic behavior in ZTO TFTs, depicting that the μsat and SS values were a maximum (3.4 cm2/V.s) and minimum (0.38 V/decade) at Zn/Sn = 1 ratio. Interestingly, the x-ray absorption and X-ray photoemission spectroscopy revealed the origin of parabolic behavior, indicating not only to improve a charge transport in conduction bands but also to increase the Sn4+/Sn2+ ratio at the peak values (Sn/(Zn + Sn) = 1). |
| Starting Page | 319 |
| Ending Page | 323 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/s10832-014-9902-8 |
| Volume Number | 32 |
| Alternate Webpage(s) | http://apel.dongguk.edu/publication/sci/docs/97.pdf |
| Journal | Journal of Electroceramics |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
