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Light-emitting-diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range.
| Content Provider | Semantic Scholar |
|---|---|
| Author | Bengoechea-Encabo, Ana Albert, Steven M. López-Romero, David Lefèbvre, Pierre Barbagini, Francesca Torres-Pardo, Almudena González-Calbet, José M. Sánchez-García, M. A. Calleja, Enrique |
| Copyright Year | 2014 |
| Abstract | The growth of ordered arrays of InGaN/GaN nanocolumnar light emitting diodes by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range is reported. The device active region, consisting of a nanocolumnar InGaN section of nominally constant composition and 250 to 500 nm length, is free of extended defects, which is in strong contrast to InGaN (planar) layers of similar composition and thickness. Electroluminescence spectra show a very small blue shift with increasing current (almost negligible in the yellow device) and line widths slightly broader than those of state-of-the-art InGaN quantum wells. |
| Starting Page | 435203 |
| Ending Page | 435203 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1088/0957-4484/25/43/435203 |
| PubMed reference number | 25297338 |
| Journal | Medline |
| Volume Number | 25 |
| Issue Number | 43 |
| Alternate Webpage(s) | http://oa.upm.es/35715/1/INVE_MEM_2014_187520.pdf |
| Alternate Webpage(s) | https://doi.org/10.1088/0957-4484%2F25%2F43%2F435203 |
| Journal | Nanotechnology |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
