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Electrical spin injection from ferromagnetic MnAs metal layers into GaAs
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ramsteiner, Manfred Hao, Hui Ying Kawaharazuka, Atsushi Zhu, Hai Jiang Kästner, Markus Hey, Rudolf Däweritz, L. Grahn, Holger T. Ploog, Klaus H. |
| Copyright Year | 2002 |
| Abstract | The spin injection into GaAs has been studied for the ferromagnetic metal MnAs. Evidence for preferential minority-spin injection is obtained from the circular polarization of the electroluminescence in GaAs/(In,Ga)As light-emitting diodes (LED). The spin-injection efficiency of 6% at the MnAs/GaAs interface is estimated on the basis of spin-relaxation times extracted from time-resolved photoluminescence measurements. This efficiency, as well as the preferential spin orientation, resembles very much the injection behavior found for epitaxial Fe layers. The results do not depend on the azimuthal orientation of the epitaxial MnAs injection layer. |
| Starting Page | 813041 |
| Ending Page | 813044 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1103/PhysRevB.66.081304 |
| Alternate Webpage(s) | http://www.pdi-berlin.de/fileadmin/rsync_intra4_www1/externe_Publikationen/2002/prb66mramst_publ0.pdf |
| Alternate Webpage(s) | https://doi.org/10.1103/PhysRevB.66.081304 |
| Volume Number | 66 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |