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Organic Nano-Floating-Gate Memory with Polymer:[6,6]-Phenyl-C61 Butyric Acid Methyl Ester Composite Films
| Content Provider | Semantic Scholar |
|---|---|
| Author | Baeg, Kang-Jun Khim, Dongyoon Kim, Dong-Yu Jung, Soon-Won Noh, Yong-Young |
| Copyright Year | 2010 |
| Abstract | Here, we report on a pentacene-based, nonvolatile transistor memory device with poly(4-vinyl phenol) (PVP):[6,6]-phenyl-C61 butyric acid methyl ester (PCBM) nano-composite films as the charge storage site. Incorporation of PCBM molecules into PVP dielectric materials as charge storage sites for electrons resulted in a reversible shift in the threshold voltage (VTh) and reliable memory characteristics. The characteristics of the pentacene memory device were as follows: a relatively high field-effect mobility (µFET) (0.2–0.3 cm2 V-1 s-1) with a large memory window (ca. 20 V), a high on/off ratio (~104) during writing and erasing with application of an operating gate voltage of 60 V for a short duration time (~1 ms), and a retention time of about 40 h. |
| File Format | PDF HTM / HTML |
| DOI | 10.1143/JJAP.49.05EB01 |
| Volume Number | 49 |
| Alternate Webpage(s) | https://mse.gist.ac.kr/~ppl/2004ppl/2010%20JJAP_KJBaeg.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
