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Deposition of High-electron-mobility Transparent Conducting Aluminum-doped Zinc Oxide Thin Films by Dc Magnetron Sputtering
| Content Provider | Semantic Scholar |
|---|---|
| Author | Dung, Hoang Van |
| Copyright Year | 2018 |
| Abstract | Transparent conducting Al-doped ZnO (AZO) thin films were deposited on glass substrates by DC magnetron sputtering from AZO ceramic target (0.75 %wt Al2O3) in gas mixture of (Ar + H2) at different substrate temperatures. At value of 1.7 % of ratio of H2 to (H2+Ar) and at substrate temperature of 200 oC, electron mobility in obtained AZO films is 60.2 cm2.V-1.s-1, which is much larger than 34.6 cm2.V-1.s-1 of films fabricated in the same condition without H2. AZO films also have a low resistivity of 2.53×10-4 Ω.cm, low sheet resistance of 2.5 Ω/□ and high average transmittance above 80 % in the wavelength range of 400 – 1100 nm. |
| Starting Page | 160 |
| Ending Page | 160 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.15625/2525-2518/54/1a/11821 |
| Alternate Webpage(s) | http://vjs.ac.vn/index.php/jst/article/viewFile/11821/103810381361 |
| Alternate Webpage(s) | https://doi.org/10.15625/2525-2518%2F54%2F1a%2F11821 |
| Volume Number | 54 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
