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High-Performance Split-Gate Enhanced UMOSFET With p-Pillar Structure
| Content Provider | Semantic Scholar |
|---|---|
| Author | Wang, Ying Hu, Hai-Fan Yu, Cheng-Hao |
| Copyright Year | 2013 |
| Abstract | In this paper, a split-gate resurf stepped oxide (RSO) vertical UMOSFET with p-pillar under the p+ plug region structure is proposed. The p-pillar could modulate the electric field of the drift region with the split-gate in 3-D and simultaneously brings electric field peaks at the sidewall junction between p-pillar and n-drift region. Thus the split-gate enhanced with p-pillar (SGEP) UMOS could increase the drift region doping concentration, reduce the on-state-specific resistance, and maintains the breakdown voltage as compared with the super junction and split-gate RSO UMOSs. Numerical simulation results show that the charge imbalance endurance of SGEP is also largely increased. |
| Starting Page | 2302 |
| Ending Page | 2307 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/TED.2013.2260547 |
| Volume Number | 60 |
| Alternate Webpage(s) | https://www.silvaco.com/content/kbase/06521339.pdf |
| Journal | IEEE Transactions on Electron Devices |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
