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Ruthenium CMP Integration for Dual-Damascene Copper Interconnects
| Content Provider | Semantic Scholar |
|---|---|
| Copyright Year | 2010 |
| Abstract | device dimensions so as to stay on the Moore's Law trend line of doubling the number of circuit elements per IC. With 45nm node IC technology now in production, and 32nm to 22nm nodes under development, many of the device structures are approaching atomic limits. Thin films of traditional metals and dielectrics have been reduced in thickness to accommodate scaling demands, to the extent that fundamental materials properties no longer provide minimum functionality. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://www.cabotcmp.com/wp-content/uploads/CMC_Ruthenium_CMP_Integration.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |