All-solution processed inverted green quantum dot light-emitting diodes with concurrent high efficiency and long lifetime

Content Provider	Semantic Scholar
Author	Yang, Zhiwen Wu, Qianqian Lin, Gongli Zhou, Xiao-Chuan Wu, Weijie Yang, Xuyong Zhang, Jingxia Li, Wanwan
Copyright Year	2019
Abstract	All-solution processed inverted quantum dot light-emitting diodes (QLEDs) are promising candidates for lighting and display applications. While the external quantum efficiency of inverted devices is comparable to that of devices with normal structure, achieving both high efficiency and long lifetime in such inverted devices remains challenging. Herein, we report an all-solution processed inverted green QLED capable of achieving a 96.42 cd A−1 current efficiency, a 25.04% external quantum efficiency, and a 4943.6 h half-lifetime. This external quantum efficiency exceeds reported literature values, and the lifetime is over 19 times greater than those of previously reported all-solution processed inverted QLEDs. Such excellent performance is attributed to the precisely controlled double ZnS shells of CdSeZnS/ZnS/ZnS quantum dots, which can effectively suppress Auger recombination and Forster resonance energy transfer, as well as decrease efficiency roll-off at high driving currents. Overall, this study suggests that shell engineering of quantum dots may provide an effective means of accelerating the inverted QLEDs to meet requirements for practical display and lighting applications.
Starting Page	2009
Ending Page	2015
Page Count	7
File Format	PDF HTM / HTML
DOI	10.1039/C9MH01053J
Alternate Webpage(s)	http://www.rsc.org/suppdata/c9/mh/c9mh01053j/c9mh01053j1.pdf
Alternate Webpage(s)	https://doi.org/10.1039/C9MH01053J
Volume Number	6
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article