NDLI: Defect states investigation in poly(2-methoxy,5-(2/ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV)

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Defect states investigation in poly(2-methoxy,5-(2/ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV)

Content Provider	Semantic Scholar
Author	Nguyen, T. Rendu, Philippe Le Gaudin, Olivier P. M. Jackman, Richard B. Huang, Chunchao
Copyright Year	2006
Abstract	In this study, application of the charge based Deep Level Transient Spectroscopy (Q-DLTS) has been extended to poly(2-methoxy,5-(2Vethylhexyloxy)-1,4-phenylene vinylene) (MEH-PPV) single layer diodes, whose cathode consisted of aluminium and anode of indium tin oxide (ITO). The results reveal a broad Q-DLTS spectrum, with at least two maxima, consistent with a complex distribution of trap states. Only the Q-DLTS maximum with the shortest relaxation time could be fully resolved over the temperature range used here (100–300 K), yielding activation energies and capture cross sections in the ranges 0.3–0.4 eVand 10 - 20 –10 - 18 cm 2 , respectively. It will be shown that this energy level is likely related to a majority-carrier (hole) trap, consistent with a Poole–Frenkel injection mechanism and p-type doping of the MEH-PPV film. The origin of the second (non-resolved) Q-DLTS peak will also be discussed. D 2005 Elsevier B.V. All rights reserved.
Starting Page	338
Ending Page	341
Page Count	4
File Format	PDF HTM / HTML
DOI	10.1016/j.tsf.2005.12.033
Volume Number	511
Alternate Webpage(s)	https://ir.nctu.edu.tw/bitstream/11536/12007/1/000238249000068.pdf
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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