Effects of NH Plasma Passivation on N-Channel Polycrystalline Silicon Thin-Film Transistors

Content Provider	Semantic Scholar
Author	Cheng, Huang-Chung Wang, Fang-Shing Huang, Chun-Yao
Copyright Year	1999
Abstract	The NH3-plasma passivation has been performed on polycrystalline silicon (poly-Si) thin-film transistors (TFT’s). It is found that the TFT’s after the NH 3-plasma passivation achieve better device performance, including the off-current below 0.1 pA/ m and the on/off current ratio higher than 10, and also better hot-carrier reliability than the H 2-plasma ones. Based on optical emission spectroscopy (OES) and secondary ion mass spectroscopy (SIMS) analysis, these improvements were attributed to not only the hydrogen passivation of the defect states, but also the nitrogen pile-up at SiO2/poly-Si interface and the strong Si-N bond formation to terminate the dangling bonds at the grain boundaries of the polysilicon films. Furthermore, the gate-oxide leakage current significantly decreases and the oxide breakdown voltage slightly increases after applying NH3-plasma treatment. This novel process is of potential use for the fabrication of TFT/LCD’s and TFT/SRAM’s.
File Format	PDF HTM / HTML
Alternate Webpage(s)	https://ir.nctu.edu.tw/bitstream/11536/794/1/A1997VY96800010.pdf
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article