NDLI: Stability of Advanced Gate Stack Devices

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Stability of Advanced Gate Stack Devices

Content Provider	Semantic Scholar
Author	Kim, Il‐ Wook Han, Sang Kyun Osburn, Carlton M.
Copyright Year	2004
Abstract	The stability of poly-Si gated HfO 2 (∼1.2 nm equivalent oxide thickness, EOT) and Y 2 O 3 (∼3.1 nm EOT) n-channel metal oxide semiconductor field effect transistor devices were assessed after constant current stressing of the gate. The changes in threshold voltage and transconductance were measured as a function of stress time and stress current over the range of 10 -3 to 10 5 C of injected charge per square centimeter. With forming gas annealed HfO 2 , positive shifts in the threshold voltage exhibited a power-law dependence. Under high stressing conditions, a power-law dependence of degradation of threshold voltage on the injected charge (∼Q 0.1 ) was observed. Stressing at high current was seen to generate traps. Stressing at low current revealed a saturation of the threshold voltage after modest stressing times. Stressing on deuterium annealed sample showed less V t and g m shift (under high injection conditions), which is attributed to the effectiveness of heavier D 2 in preventing trap generation under high stressing conditions. With Y 2 O 3 , stressed at similar electric fields, the threshold voltage shifted negatively and the transconductance increased.
File Format	PDF HTM / HTML
DOI	10.1149/1.1636180
Alternate Webpage(s)	https://www.electrochem.org/dl/ma/201/pdfs/0714.pdf
Alternate Webpage(s)	https://doi.org/10.1149/1.1636180
Volume Number	151
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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