NDLI: Two-photon laser-assisted device alteration in silicon integrated circuits using a 1.28-μm femtosecond Raman-soliton fiber laser

Content Provider	Semantic Scholar
Author	Serrels, K. A. Bodoh, Dan J. Reid, Tahira N. Farrell, C. Leslie, N. Lundquist, Tobias Vedagarbha, P. Erington, K.
Copyright Year	2013
Abstract	By inducing two-photon absorption to perturb the switching characteristics of sensitive transistors located within the active layer of a proprietary 28-nm silicon test chip, we demonstrate time-resolved nonlinear laser-assisted device alteration.
Starting Page	1
Ending Page	2
Page Count	2
File Format	PDF HTM / HTML
DOI	10.1364/OE.21.029083
Alternate Webpage(s)	https://pureapps2.hw.ac.uk/ws/portalfiles/portal/5949224
Alternate Webpage(s)	https://pureapps2.hw.ac.uk/ws/portalfiles/portal/5949224/Two_photon_laser_assisted_device_alteration.pdf
Alternate Webpage(s)	https://apps.dtic.mil/dtic/tr/fulltext/u2/1042059.pdf
Alternate Webpage(s)	http://dcgsystems.com/PDF/Optics_express_2pLADA.pdf
PubMed reference number	24514459
Alternate Webpage(s)	https://doi.org/10.1364/OE.21.029083
Journal	Medline
Journal	CLEO: 2013
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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Two-photon laser-assisted device alteration in silicon integrated circuits using a 1.28-μm femtosecond Raman-soliton fiber laser