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Growth of carbon nanotubes at low powers by impedance-matched microwave plasma enhanced chemical vapor deposition method.
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chen, S. Y. Chang, L. W. Peng, C. W. Miao, Yan Lue, Juh-Tzeng |
| Copyright Year | 2005 |
| Abstract | A solo carbon nanotube (CNT) was successfully grown on nickel electrodes by a microwave plasma enhanced chemical vapor deposition (MPECVD) method equipped with an impedance-matched substrate holder with the reaction gases composed of hydrogen (H2), carbon dioxide (CO2), and methane (CH4) mixtures. An introduction of carbon dioxide gas before CNTs growth, the substrate temperature can easily be reached above 610 degrees C even heated at a low microwave power. This can be enunciated from fact that carbon dioxide inherits with higher bond energy for molecular dissociation, lower thermal conductivity, and higher heat capacity in comparing to other gases. The electron field emissions for randomly aligned CNTs and well-aligned CNTs grown by MPECVD and by radio frequency assisted hot-filament methods, respectively, are measured and compared. The higher field emission characteristic of the randomly aligned CNTs is presumed to be due to the protruded CNTs, which inheriting with less screening effect and manifesting with defects are crucial to play the effective emission sites. |
| File Format | PDF HTM / HTML |
| DOI | 10.1166/jnn.2005.437 |
| PubMed reference number | 16433426 |
| Journal | Medline |
| Volume Number | 5 |
| Issue Number | 11 |
| Alternate Webpage(s) | http://www2.kuas.edu.tw/prof/kenymiao/publication/Miao_4.pdf |
| Journal | Journal of nanoscience and nanotechnology |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
