The Effect of Annealing Temperature on the Piezoelectric and Dielectric Properties of Lead-free Bi 0 . 5 ( Na 0 . 85 K 0 . 15 ) 0 . 5 TiO 3 Thin Films

Content Provider	Semantic Scholar
Author	Sik, Sung Won, Chang Won
Abstract	We fabricated Bi0.5(Na0.85K0.15)0.5TiO3 (BNKT) lead-free thin films on Pt(111)/TiO2/SiO2/ Si(100) substrates by using a chemical solution deposition method. The BNKT thin films were annealed at 650, 700, 750, or 800 ◦C in an O2 atmosphere. X-ray diffraction patterns revealed a pure perovskite structure at annealing temperatures from 650 to 800 ◦C. A field emission electron microscope study revealed an increase in grain size with increasing annealing temperature. BNKT thin films annealed at 700 ◦C had a high remnant effective piezoelectric coefficient of 63.6 pm/V and a low leakage current density of 5.15 × 10−6 A/cm.
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Alternate Webpage(s)	https://page-one.springer.com/pdf/preview/10.3938/jkps.61.928
Language	English
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Content Type	Text
Resource Type	Article