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Thickness-dependent bulk properties and weak anti-localization effect in topological insulator Bi
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kim, Yong Seung Brahlek, Matthew J. Bansal, Namrata Edrey, Eliav Kapilevich, Gary A. Iida, Keiko Tanimura, Makoto Horibe, Yoichi Cheong, S. W. Oh, Seongshik |
| Copyright Year | 2011 |
| Abstract | We show that a number of transport properties in topological insulator (TI) Bi2Se3 exhibit striking thickness-dependences over a range of up to five orders of thickness (3 nm – 170 μm). Volume carrier density decreased with thickness, presumably due to diffusion-limited formation of selenium vacancies. Mobility increased linearly with thickness in the thin film regime and saturated in the thick limit. The weak anti- |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://arxiv.org/pdf/1104.0913.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Bismuth selenide Selenium Thickness (graph theory) Topological insulator orders - HL7PublishingDomain |
| Content Type | Text |
| Resource Type | Article |
