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Characteristics of carbon nanotubes deposited by using low-temperature atmospheric-pressure plasma-enhanced chemical vapor deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kim, Chanwoo Kyung, Se-Jin Yeom, Geun Young |
| Copyright Year | 2005 |
| Abstract | In this study, carbon nanotubes (CNTs) were grown using a capillary dielectric barrier discharge (DBD)-type atmospheric-pressure plasma-enhanced chemical vapor deposition (AP-PECVD) system at a low temperature of 400 ◦C, and their growth characteristics were investigated. The CNTs grown using He (6 slm)/C2H2 (90 sccm) AP-PECVD with additive gases (NH3, N2) for 5 minutes at 400 ◦C after a pretreatment were multi-layer CNTs with diameter of 20 – 50 nm and uniform lengths of 1.5 – 2 μm. FT-Raman spectroscopy showed that the grown CNTs were multi-wall CNTs with a D-band/G-band intensity ratio of 0.9. Transmission electron microscopy of the AP-PECVDgrown CNTs showed that the CNT had a 30-nm outer diameter and a 7-nm hollow inner diameter with a Ni particle on the top of the tube. |
| Starting Page | 918 |
| Ending Page | 921 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| Volume Number | 46 |
| Alternate Webpage(s) | https://pnpl.skku.edu/_res/pnpl/etc/2005-09.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
