DIODE PROPERTY OF n-ZnO/p-Si HETEROJUNCTION STRUCTURE IN THE DARK AND ILLUMINATION CONDITION

Content Provider	Semantic Scholar
Author	Gezgin, Serap Yiğit Kepceoğlu, Abdullah Toprak, Ahmet Suat Gündoğdu, Yasemin Kılıç, Hamdi Şükür
Copyright Year	2018
Abstract	DIODE PROPERTY OF n-ZnO/p-Si HETEROJUNCTION STRUCTURE IN THE DARK AND ILLUMINATION CONDITION Abstract In this study, Zinc Oxide (ZnO) thin film was deposited on the Silicon (Si) wafer by Pulsed Laser Deposition (PLD) to form n-ZnO/p-Si heterojunction. The morphological and the crystal structure of ZnO thin film was analysed and interpreted by Atomic Force Microscopy (AFM) and X-Ray Diffraction (XRD), respectively. The absorption spectrum was obtained by using the UV-Vis spectra and the band gap (E g ) was found by using Tauc Law. The current density-Voltage (J-V) plot was obtained at room temperature (RT) in the dark and under illumination. The barrier height (BH) and ideality factor were found about 0.46 eV and 1.35, respectively. The largest values of open circuit voltage (V oc ) and short-circuit current (J sc ) were about 100 mV and 3×10 -2 mA/cm 2 , respectively. It has been measured that ZnO/Si heterojunction diode behaves a solar cell like device under the illumination conditions. Keywords: Heterojunction, open circuit voltage, short circuit current, barrier height, ideality factor KARANLIK ve AYDINLIK ŞARTLARDA n-ZnO/p-Si HETEROEKLEM YAPISININ DIYOT OZELLIĞI Ozet Bu calismada, n-ZnO/p-Si heteroeklem olusturmak icin Silikon (Si) wafer uzerine Cinko Oksit (ZnO) ince film Puls Lazer Deposizasyon (PLD) ile depozit edilmistir. ZnO ince filmin morfolojik ve kristal yapisi, sirasiyla Atomik Kuvvet Mikroskopu (AFM) ve X-Ray Kirinimi (XRD) ile analiz edilmis ve yorumlanmistir. Sogurma spektrumu UV-Vis spektrumu kullanilarak elde edilmis ve bant araligi (E g ) Tauc yasasi kullanilarak bulunmustur. Akim yogunlugu-Gerilim (J-V) grafigi, oda sicakliginda (RT) karanlikta ortamda ve isik altinda elde edilmistir. Bariyer yuksekligi (BH) ve idealite faktoru sirasiyla yaklasik 0.46 eV ve 1.35 bulunmustur. Acik devre voltajinin (V oc ) ve kisa devre akim yogunlugunun (J sc ) en buyuk degerleri sirasiyla 100 mV ve 3x10 -2 mA/cm 2 ’dir. ZnO/Si heteroeklem diyotunun isik altinda gunes piline benzer bir cihaz gibi davrandigi gozlemlenmistir. Anahtar Kelimeler: Heteroeklem, acik devre voltaji, kisa devre akimi, bariyer yuksekligi, idealite faktoru
Starting Page	19
Ending Page	30
Page Count	12
File Format	PDF HTM / HTML
Volume Number	17
Alternate Webpage(s)	http://sutod.selcuk.edu.tr/sutod/article/download/406/633
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article