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Effect of proton irradiation energy on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors
| Content Provider | Semantic Scholar |
|---|---|
| Author | Fares, Chaker Pearton, Stephen J. Yang, Gwangseok Kim, Ji Hyun Lo, Chien-Fong Johnson, J. W. |
| Copyright Year | 2018 |
| Abstract | The effects of proton irradiation energy on the electrical properties of SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors (MISHEMTs) using in situ grown silicon nitride as the gate dielectric were studied. The SiNx/AlGaN/GaN MISHEMT devices were irradiated with protons at energies of 5, 10, or 15 MeV at a fixed fluence of 2.5 × 1014 cm−2. The largest amount of device degradation was shown in the samples irradiated with the lowest irradiation energy of 5 MeV. The DC saturation current was reduced by 10.4%, 3.2%, and 0.5% for MISHEMTs irradiated with proton energies of 5, 10, and 15 MeV, respectively. Device performance degradation was more pronounced in the irradiated samples under high-frequency operation. At a frequency of 100 kHz, the percent saturation drain current reduction at a gate voltage of 3 V was 40%, 19%, and 17% after proton irradiation at 5, 10, and 15 MeV, respectively. The carrier removal rates for the MISHEMT devices were in the range of 21–144 cm−1 for the ... |
| Starting Page | 052202 |
| Ending Page | 052202 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1116/1.5049596 |
| Alternate Webpage(s) | http://ww2.che.ufl.edu/ren/paper/2018%20pro.pdf |
| Alternate Webpage(s) | https://doi.org/10.1116/1.5049596 |
| Volume Number | 36 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
