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Mid-IR focal plane array based on type-II InAs/GaSb strain layer superlattice detector with nBn design
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kim, Ha Seong Plis, Elena Rodríguez, Jesús Barrera Bishop, Gregory Sharma, Yagya D. Dawson, L. Ralph Krishna, Sanjay Bundas, Jason Cook, Robert Burrows, David N. Dennis, R. B. Patnaude, Kelly Reisinger, Axel R. Sundaram, Mani |
| Copyright Year | 2008 |
| Abstract | A midwave infrared camera (λc=4.2μm) with a 320×256 focal plane array (FPA) based on type-II InAs∕GaSb strain layer superlattice (SLs) has been demonstrated. The detectors consist of an nBn heterostructure, wherein the SL absorber and contact layers are separated by a Al0.2Ga0.8Sb barrier layer, which is designed to have a minimum valence band offset. Unlike a PN junction, the size of the device is not defined by a mesa etch but confined by the lateral diffusion length of minority carriers. At 77K, the FPA demonstrates a temporal noise equivalent temperature difference (NETD) of 23.8mK (Tint=16.3ms and Vb=0.7V) with a peak quantum efficiency and detectivity at 3.8μm equal to 52% and 6.7×1011 Jones, respectively. |
| Starting Page | 183502 |
| Ending Page | 183502 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.2920764 |
| Volume Number | 92 |
| Alternate Webpage(s) | http://www.chtm.unm.edu/publications/pub101.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.2920764 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
