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High Temperature Transport Properties of AlGaN / GaN Heterostructures
| Content Provider | Semantic Scholar |
|---|---|
| Author | Khan, Ashraf Shah, Faisal Siddiq, J. Abubakkar Vasen, E. Tim |
| Copyright Year | 2009 |
| Abstract | High temperature transport properties of the twodimensional electron gas (2DEG) in AlxGa1-xN/GaN heterostructures are investigated theoretically. An overview of previous high temperature investigations of the 2DEG mobility and density is provided. A one-dimensional Schrodinger-Poisson solver is used to determine the 2DEG sheet concentration as a function of temperature. A method of calculating the polar optical phonon scattering rate in shown. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www3.nd.edu/~djena/ee87024/report1st_ashraf_vasen_faisal_jafar.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |