p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111).

Content Provider	Semantic Scholar
Author	Nguyen, Hieu Pham Trung Zhang, Shaofei Han, Xinhai Fathololoumi, Saeed Couillard, Martin Botton, Gianluigi A. Mi, Zetian
Copyright Year	2011
Abstract	Full-color, catalyst-free InGaN/GaN dot-in-a-wire light-emitting diodes (LEDs) were monolithically grown on Si(111) by molecular beam epitaxy, with the emission characteristics controlled by the dot properties in a single epitaxial growth step. With the use of p-type modulation doping in the dot-in-a-wire heterostructures, we have demonstrated the most efficient phosphor-free white LEDs ever reported, which exhibit an internal quantum efficiency of ∼56.8%, nearly unaltered CIE chromaticity coordinates with increasing injection current, and virtually zero efficiency droop at current densities up to ∼640 A/cm(2). The remarkable performance is attributed to the superior three-dimensional carrier confinement provided by the electronically coupled dot-in-a-wire heterostructures, the nearly defect- and strain-free GaN nanowires, and the significantly enhanced hole transport due to the p-type modulation doping.
File Format	PDF HTM / HTML
DOI	10.1021/nl104536x
Alternate Webpage(s)	https://mcgill.ca/microfab/files/microfab/microfab_report__zetian_mi_1.pdf
PubMed reference number	21517080
Alternate Webpage(s)	https://doi.org/10.1021/nl104536x
Journal	Medline
Volume Number	11
Issue Number	5
Journal	Nano letters
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article