Sub-bandgap photo-response of non-doped black-silicon fabricated by nanosecond laser irradiation.

Content Provider	Semantic Scholar
Author	Li, Chenkui Zhao, Ji-hong Chen, Qi-Dai Feng, Jing Sun, Hong-Bo
Copyright Year	2018
Abstract	Non-doped black silicon (b-Si) is fabricated on the surface layer of a near-intrinsic Si substrate by nanosecond (ns) laser direct writing in an argon (Ar) atmosphere. The non-doped samples exhibit a near-unity sub-bandgap (1100∼2500  nm) absorptance of more than 50%. Amazingly, the resistivity of the ns laser irradiated b-Si layer is about five orders of magnitude lower than that of the unprocessed Si substrate. The carrier density of the b-Si layer is about 1×1018  cm-3, according to the Hall effect measurement. Temperature-dependent Hall effect measurements show that the non-doped b-Si layer exhibits an energy level of 0.026 eV below the conduction band minimum (CBM). At last, Si infrared photodiodes are made based on the difference of carrier concentration between the ns laser-processed b-Si layer and the high-resistivity Si substrate. The responsivity of the b-Si photodiode for 1310 nm is up to 256  mA/W at a 10-V reverse bias, which is much higher than that of the reported pure Si bulk-structure photodiodes.
Starting Page	1710
Ending Page	1713
Page Count	4
File Format	PDF HTM / HTML
Alternate Webpage(s)	http://www.lasun-jlu.cn/LaSuN/upload/file/publications/LCH-2018-OL.pdf
PubMed reference number	29652346v1
Alternate Webpage(s)	https://doi.org/10.1364/OL.43.001710
DOI	10.1364/ol.43.001710
Journal	Optics letters
Volume Number	43
Issue Number	8
Language	English
Access Restriction	Open
Subject Keyword	Argon Associative aphasia Exhibits as Topic Greater Than Silicon nanosecond orders - HL7PublishingDomain
Content Type	Text
Resource Type	Article