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METHOD FOR FABRICATION OF AN MIM CAPACTOR AND RELATED STRUCTURE BACKGROUND OF THE INVENTION 1. Field of the Invention
| Content Provider | Semantic Scholar |
|---|---|
| Author | Dinkins, Anthony |
| Copyright Year | 2017 |
| Abstract | (*) Notice: Subject to any disclaimer, the term of this According to a disclosed embodiment, an interconnect metal patent is extended or adjusted under 35 layer is deposited. The interconnect metal layer can be, for U.S.C. 154(b) by 0 days. example, aluminum, copper, or an aluminum-copper alloy. Then a first dielectric is fabricated over the interconnect (21) Appl. No.: 09/721,342 metal layer. The first dielectric can be, for example, Silicon nitride. A top metal layer is then formed over the first (22) Filed: Nov. 22, 2000 dielectric. The top metal layer can be, for example, titanium (51) Int. Cl. ........................... H01G 4/228; HO1G 4/06 R.N. E. style s t M |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/49/be/01/5a527455ed27ab/US6430028.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
