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Point defect engineered Si sub-bandgap light-emitting diode.
| Content Provider | Semantic Scholar |
|---|---|
| Author | Bao, Jiming Tabbal, Malek Kim, Taegon Charnvanichborikarn, Supakit Williams, James S. Aziz, Michael J. Capasso, Federico |
| Copyright Year | 2007 |
| Abstract | We present a novel approach to enhance light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction of point defects that enhance the radiative recombination rate. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create a diode containing a self-interstitial-rich optically active region from which the zero-phonon emission line at 1218 nm originates. |
| Starting Page | 86C |
| Ending Page | 88C |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://openresearch-repository.anu.edu.au/bitstream/10440/440/1/Bao_Point2007.pdf |
| Alternate Webpage(s) | https://www.seas.harvard.edu/capasso/wp-content/uploads/publications/Bao_Opt_Express_15_6727_2007.pdf |
| Alternate Webpage(s) | http://aziz.seas.harvard.edu/files/mja175.pdf?m=1381958969 |
| PubMed reference number | 19546982v1 |
| Volume Number | 15 |
| Issue Number | 11 |
| Journal | Optics express |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Arabic numeral 0 Immunoglobulin lambda-Chains International System of Units Ions Light Emitting Diode Device Component Phonons |
| Content Type | Text |
| Resource Type | Article |