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Process for Production of Polycrystalline Silicon Background of the Invention
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kunemund, Bob M. |
| Copyright Year | 2017 |
| Abstract | The invention provides a process for producing polycrystal line silicon, including introduction of a reaction gas contain ing a silicon-containing component and hydrogen by means of one or more nozzles into a reactor including at least one heated filament rod on which silicon is deposited, wherein an Archimedes number Ar, which describes flow conditions in the reactor, as a function of the fill level FL which states the ratio of one rod Volume to one empty reactor Volume in percent, for a fill level FL of up to 5% is within the range limited at the lower end by the function Ar=2000xFL'and at the upper end by the function Ar=17 000xFL', and at a fill level of greater than 5% is within a range from at least 750 to at most 4000. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/bc/63/60/c9e039d5e1e975/US8894766.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Patent |
