AFRL-PR-WP-TP-2006-206 EFFECT OF O 2 PARTIAL PRESSURE ON YBa 2 Cu 3 O 7 – δ THIN FILM GROWTH BY PULSED LASER DEPOSITION

Content Provider	Semantic Scholar
Author	Haugan, Timothy J. Barnes, Paul N. Brunke, Lyle Maartense, Iman Murphy, James
Copyright Year	2006
Abstract	YBa2Cu3O7 d thin films were processed by pulsed laser deposition on (1 0 0) LaAlO3 substrates using O2 partial pressures from 120 to 1200 mTorr. The effect of O2 pressure on film properties including room temperature resistivities and microstructures was studied for a unique set of deposition parameters. The film quality was observed to remain high over a wide range of O2 partial pressures, with much less sensitivity to O2 pressure than previous studies which are compared. For O2 pressures from 200 to 1200 mTorr, superconducting transition temperatures consistently reached values >91.5 K and transport critical current densities were 3–5 MA/cm (77 K, self-field). It is proposed that less sensitivity of film properties to O2 pressure is achieved by: (1) reducing the particle velocity of the plume below a critical threshold, and (2) using a deposition temperature of 785 C for adequate surface activation. 2003 Elsevier B.V. All rights reserved. PACS: 74.76.B; 74.72.B; 81.15.F
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Alternate Webpage(s)	http://www.dtic.mil/dtic/tr/fulltext/u2/a460193.pdf
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article