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Surface acoustic wave characteristics of AlN thin films grown on a polycrystalline 3C-SiC buffer layer
| Content Provider | Semantic Scholar |
|---|---|
| Author | Hoang, Si-Hong Chung, Gwiy-Sang |
| Copyright Year | 2009 |
| Abstract | 0167-9317/$ see front matter 2009 Elsevier B.V. A doi:10.1016/j.mee.2009.02.030 * Corresponding author. Tel.: +82 52 259 1248; fax E-mail address: gschung@ulsan.ac.kr (G.-S. Chung) In this study, AlN thin films were deposited on a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) applications using a pulsed reactive magnetron sputtering system. AFM, XRD and FT-IR were used to analyze structural properties and the morphology of the AlN/3C-SiC thin film. Suitability of the film in SAW applications was investigated by comparing the SAW characteristics of an interdigital transducer (IDT)/AlN/3C-SiC structure with the IDT/AlN/Si structure at 160 MHz in the temperature range 30–150 C. These experimental results showed that AlN films on the poly (111) preferred 3C-SiC have dominant c-axis orientation. Furthermore, the film showed improved temperature stability for the SAW device, TCF = 18 ppm/ C. The change in resonance frequency according to temperature was nearly linear. The insertion loss decrease was about 0.033 dB/ C. However, some defects existed in the film, which caused a slight reduction in SAW velocity. 2009 Elsevier B.V. All rights reserved. |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.mee.2009.02.030 |
| Alternate Webpage(s) | https://warwick.ac.uk/fac/sci/eng/research/grouplist/sensorsanddevices/mbl/database/fbar_references/surface_acoustic_wave_characteristics_of_aln_thin_films_grown_on_a_polycrystalline_3c-sic_buffer_layer.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.mee.2009.02.030 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
