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Core excitons and conduction-band structures in orthorhombic GeS, GeSe, SnS, and SnSe single crystals.
| Content Provider | Semantic Scholar |
|---|---|
| Author | Taniguchi Johnson, Maya Ghijsen Cardona |
| Copyright Year | 1990 |
| Abstract | Photoelectron partial-yield and constant-initial-state (CIS) spectra of the layered-semiconductor GeS, GeSe, ${\mathrm{SnS}}_{0.9}${\mathrm{Se}}_{0.1}$, and SnSe single crystals were investigated with use of synchrotron radiation. The cation d core (Ge 3d and Sn 4d) yield spectra show intense and sharp doublets due to cation-derived core excitons. The CIS spectra exhibit strong resonance due to an interference between the direct-recombination process of the core excitons and the direct-excitation process of the valence electrons. The strong resonance is characteristic of core excitons with a long lifetime and a fairly localized nature. The anion p and d core (S 2p and Se 3d) yield spectra are much broader than the cation d core spectra and reflect the density of states (DOS) of the conduction bands. Energies of the experimental DOS peaks compare favorably with conduction-band features derived from interband optical-absorption spectra. |
| Starting Page | 3634 |
| Ending Page | 3643 |
| Page Count | 10 |
| File Format | PDF HTM / HTML |
| DOI | 10.1103/PhysRevB.42.3634 |
| PubMed reference number | 9995878 |
| Journal | Medline |
| Volume Number | 42 |
| Issue Number | 6 |
| Alternate Webpage(s) | http://bib-pubdb1.desy.de/record/324680/files/PhysRevB.42.3634.pdf |
| Alternate Webpage(s) | https://doi.org/10.1103/PhysRevB.42.3634 |
| Journal | Physical review. B, Condensed matter |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
