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Coaxial nanowires from van der Waals epitaxy
| Content Provider | Semantic Scholar |
|---|---|
| Author | Li, Xiuling Mohseni, Parsian Katal |
| Copyright Year | 2013 |
| Abstract | The development of optoelectronic devices such as sensors, emitters, and photovoltaic cells is increasingly dependent on the fabrication of novel semiconductor alloys made from materials that do not readily form the monolithic crystals needed for highperformance operation. Heteroepitaxy provides a route toward such crystals by 'growing' the desired alloy on the planar face of a crystalline substrate. Van der Waals epitaxy refers to a very particular variation on this method, where layers are formed on inert 2D substrates such as graphene, an entirely planar material with all atoms and bonds between them in the same plane. The lack of dangling bonds at the 2D substrate's free surface disallows covalent bond formation, resulting in an atomically smooth interface. The interaction between the graphene layer and 'epilayers' grown on top therefore consists only of transient van der Waals forces, temporary fluctuations in polarity resulting from orbiting electrons. In principle, this allows fabrication of architectures on substrates where there is a high degree of lattice mismatching, without the commonly observed dislocations that result from lattice distortion. Originally applied to the growth of transition metal dichalcogenides (metals combined with elements of group VI of the periodic table, such as sulfur and selenium) in the early 1990s, van der Waals epitaxy was shown to enable high-quality crystal growth, even in heterogeneous systems with up to 10% lattice mismatch.1 More recently, the same concept has been applied to the heterogeneous growth of silicon nanowire (NW) arrays on mica2 and indium arsenide NWs on graphene.3 In particular, the latter study demonstrated a large leap forward toward the integration of technologically relevant III-V semiconductor materials on a conductive, transparent, and flexible platform. This work suggested that significant cost reduction may be realized through epitaxial growth of large-area NW arrays, bypassing the use of III-V materials or standard Figure 1. (a) Tilted-view scanning electron microscopy (SEM) image of a field of indium gallium arsenide (InGaAs) nanowires (NWs) grown on a monolayer graphene sheet. (b) False-color scanning transmission electron microscopy image obtained from a single core-shell InAs-InGaAs NW, highlighting the phase-segregated structure. |
| File Format | PDF HTM / HTML |
| DOI | 10.1117/2.1201309.005122 |
| Alternate Webpage(s) | http://www.spie.org/documents/Newsroom/Imported/005122/005122_10.pdf |
| Alternate Webpage(s) | https://doi.org/10.1117/2.1201309.005122 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
