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Etching characteristics and mechanisms of Mo thin films in Cl2/Ar and CF4/Ar inductively coupled plasmas
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lim, Nomin Efremov, Alexander Yeom, Geun Young Choi, Bok-Gil Kwon, Kwang-Ho |
| Copyright Year | 2014 |
| Abstract | The etching characteristics and mechanism of Mo thin films in Cl2/Ar and CF4/Ar inductively coupled plasmas under the same operating conditions (pressure, 6 mTorr; input power, 700 W; bias power, 200 W) were investigated. For both gas mixtures, an increase in the Ar fraction or gas pressure at a fixed gas mixing ratio was found to cause a non-monotonic change in the Mo etching rates. The X-ray photoelectron spectroscopy (XPS) diagnostics indicated contamination of the etched surfaces by reaction products. The Cl2/Ar and CF4/Ar plasma parameters were also investigated using a combination of a zero-dimensional plasma model and plasma diagnostics using Langmuir probes. An analysis of the etching kinetics with the model-predicted fluxes of the plasma active species suggests that: 1) the Mo etching process occurs in the transitional regime of the ion-assisted chemical reaction, and 2) the non-monotonic Mo etching rate is probably associated with opposing changes in the fluxes of the reactive neutral species and ion energy. |
| Starting Page | 116201 |
| Ending Page | 116201 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.7567/JJAP.53.116201 |
| Volume Number | 53 |
| Alternate Webpage(s) | https://pnpl.skku.edu/_res/pnpl/etc/2014-12.pdf |
| Alternate Webpage(s) | https://doi.org/10.7567/JJAP.53.116201 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
