NDLI: ELECTRONIC PROPERTIES OF InAs/GaAs SELF-ASSEMBLED QUANTUM DOT STRUCTURES AND DEVICES STUDIED BY PHOTOCURRENT SPECTROSCOPY

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ELECTRONIC PROPERTIES OF InAs/GaAs SELF-ASSEMBLED QUANTUM DOT STRUCTURES AND DEVICES STUDIED BY PHOTOCURRENT SPECTROSCOPY

Content Provider	Semantic Scholar
Author	Mowbray, Duncan John Fry, Paul W. Skolnick, M. S. Itskevich, I. E. Harris, L. Ashmore, A. D. Finley, Jonathan J. Wilson, Luke R. Schumacher, Kimberly L. Barker, John A. O'Reilly, Eoin P. Al-Khafaji, M. A. Cullis, Anthony G. Hopkinson, M. Clark, Jeffery Caleb Hill, Geoff
Copyright Year	2000
Abstract	The power of photocurrent spectroscopy to study the electronic properties of InAs/GaAs self-assembled quantum dots is described. From comparison of results from different samples it is shown that photocurrent provides a direct means to measure absorption spectra of quantum dots. Studies in high electric field enable the electron-hole vertical alignment to be determined. Most surprisingly this is found to be opposite to that predicted by all recent predictions. Comparison with theory shows that this can only be explained if the dots contain significant amounts of gallium, and have a severely truncated shape. The nature of the ground and excited state transitions, carrier escape mechanisms from dots, in-plane wave function anisotropies and the modal gain of a quantnm dot laser are determined. PACS numbers: 73.61.Ey, 78.66.Fd, 42.55.Px, 73.50.Pz
Starting Page	279
Ending Page	293
Page Count	15
File Format	PDF HTM / HTML
DOI	10.12693/APhysPolA.98.279
Volume Number	98
Alternate Webpage(s)	http://przyrbwn.icm.edu.pl/APP/PDF/98/a098z3p10.pdf
Alternate Webpage(s)	https://doi.org/10.12693/APhysPolA.98.279
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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